Invention Grant
- Patent Title: Semiconductor carrier with vertical power FET module
- Patent Title (中): 具有垂直功率FET模块的半导体载体
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Application No.: US13168922Application Date: 2011-06-24
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Publication No.: US08749054B2Publication Date: 2014-06-10
- Inventor: L. Pierre de Rochemont
- Applicant: L. Pierre de Rochemont
- Agency: Burns & Levinson LLP
- Agent Jacob N. Erlich; David W. Gomes
- Main IPC: H01L23/34
- IPC: H01L23/34
Abstract:
A monolithic power switch provides a semiconductor layer, a three dimensional FET formed in the semiconductor layer to modulate currents through the semiconductor layer, and a toroidal inductor with a ceramic magnetic core formed on the semiconductor layer around the FET and having a first winding connected to the FET.
Public/Granted literature
- US20110316612A1 SEMICONDUCTOR CARRIER WITH VERTICAL POWER FET MODULE Public/Granted day:2011-12-29
Information query
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