Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13601066Application Date: 2012-08-31
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Publication No.: US08749078B2Publication Date: 2014-06-10
- Inventor: Sadatoshi Murakami
- Applicant: Sadatoshi Murakami
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-051034 20120307
- Main IPC: H01L23/544
- IPC: H01L23/544

Abstract:
According to one embodiment, a semiconductor device includes a stacked body in which a plurality of conductive layers and a plurality of insulating layers are alternately stacked. The semiconductor device includes a mark and a supporting unit. The mark is opened onto a surface of the stacked body. The supporting unit is provided around the mark. The supporting unit extends in a stacked direction of the stacked body. The supporting unit is in contact with at least a plurality of conductive layers.
Public/Granted literature
- US20130234299A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-09-12
Information query
IPC分类: