Invention Grant
- Patent Title: CML to CMOS conversion circuit
- Patent Title (中): CML到CMOS转换电路
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Application No.: US13656700Application Date: 2012-10-20
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Publication No.: US08749269B2Publication Date: 2014-06-10
- Inventor: Yongfeng Cao
- Applicant: Yongfeng Cao
- Applicant Address: CN Shanghai
- Assignee: Shanghai Huali Microelectronics Corporation
- Current Assignee: Shanghai Huali Microelectronics Corporation
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201110322330 20111021
- Main IPC: H03K19/0185
- IPC: H03K19/0185

Abstract:
The present invention provides a CML to CMOS conversion circuit comprising a first differential unit, a second differential unit, and an output unit. The output unit comprises a series connection of a first inverter and a second inverter, wherein, a resistor is connected with the first inverter in parallel. The CML to CMOS conversion circuit of the present invention omits the amplifier in the conventional circuit and reduces the delay time to 34 ps, which is almost half of the delay time of 64 ps in the conventional circuit, and thus provides more clock delay redundancy for the high speed parallel-serial conversion circuit.
Public/Granted literature
- US20130099822A1 CML TO CMOS CONVERSION CIRCUIT Public/Granted day:2013-04-25
Information query
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