Invention Grant
- Patent Title: Gate-based output power level control power amplifier
- Patent Title (中): 基于门控输出功率电平控制功率放大器
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Application No.: US13310544Application Date: 2011-12-02
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Publication No.: US08749309B2Publication Date: 2014-06-10
- Inventor: Daniel Ho , Stephen Franck , Ying Shi , Baker Scott
- Applicant: Daniel Ho , Stephen Franck , Ying Shi , Baker Scott
- Applicant Address: KY George Town
- Assignee: RF Micro Devices (Cayman Islands), Ltd.
- Current Assignee: RF Micro Devices (Cayman Islands), Ltd.
- Current Assignee Address: KY George Town
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H03G3/10
- IPC: H03G3/10

Abstract:
A gate power control technique for a power amplifier (PA) provides practical improved efficiency at backed-off power levels. It can be applied to the main gate of the output stage of the PA, the cascode gate, or any combination thereof. Both voltage mode and current mode signal processing may be used. The gate power control can be implemented in both open-loop and closed-loop using AC and DC coupled drivers and output stages. It may further use one or more control ports in the radio frequency (RF) signal path.
Public/Granted literature
- US20120139635A1 Gate-Based Output Power Level Control Power Amplifier Public/Granted day:2012-06-07
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