Invention Grant
- Patent Title: Semiconductor device including transistors
- Patent Title (中): 半导体器件包括晶体管
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Application No.: US13118640Application Date: 2011-05-31
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Publication No.: US08749453B2Publication Date: 2014-06-10
- Inventor: Atsushi Umezaki
- Applicant: Atsushi Umezaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2005-269323 20050916
- Main IPC: G09G3/30
- IPC: G09G3/30

Abstract:
A first capacitor obtains a gate-source voltage of a first transistor in accordance with a programming current flowing through the first transistor, and a second capacitor obtains a threshold voltage of a second transistor. Then, the electric charges held in the first capacitor and the second capacitor are capacitively coupled. By using the voltage obtained with the capacitively coupling as a gate-source voltage of the first transistor, constant current in accordance with the programming current can be supplied to a light emitting element.
Public/Granted literature
- US20110227067A1 DISPLAY DEVICE AND DRIVING METHOD OF THE SAME Public/Granted day:2011-09-22
Information query
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