Invention Grant
- Patent Title: Semiconductor device with a plurality of power supply systems
- Patent Title (中): 具有多个电源系统的半导体装置
-
Application No.: US13586214Application Date: 2012-08-15
-
Publication No.: US08749932B2Publication Date: 2014-06-10
- Inventor: Masanori Tanaka , Morihisa Hirata , Hitoshi Okamoto
- Applicant: Masanori Tanaka , Morihisa Hirata , Hitoshi Okamoto
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2006-015146 20060124
- Main IPC: H02H9/00
- IPC: H02H9/00

Abstract:
A protection circuit includes a first power supply system including a first power supply and a first ground, a second power supply system including a second power supply and a second ground, and a control circuit that, when coupled to an electro-static discharge (ESD) stress being applied to the first power supply system, controls a first switch. The first switch is provided between the signal line and the first ground. The control circuit includes a capacitance element, a resistance element in series with the capacitance element, and an inverter, an output of the inverter being connected between a gate of the first switch, an input of the inverter being connected to a connecting point between the capacitance element and the resistance element.
Public/Granted literature
- US20120307408A1 SEMICONDUCTOR DEVICE WITH A PLURALITY OF POWER SUPPLY SYSTEMS Public/Granted day:2012-12-06
Information query