Invention Grant
US08749977B2 Power semiconductor module and its attachment structure 有权
功率半导体模块及其附件结构

Power semiconductor module and its attachment structure
Abstract:
A power semiconductor module includes: a first metal substrate on which a power semiconductor device is mounted; a second metal substrate on which a power semiconductor device is not mounted; and an electrically insulating resin package which seals the first metal substrate and the second metal substrate. The back surface of the first metal substrate on the side opposite to the mounting surface of the power semiconductor device is made to expose outside the resin package to form a heat dissipation surface.
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