Invention Grant
US08750015B2 Integrated circuit comprising a FRAM memory and method for granting read-access to a FRAM memory
有权
包括FRAM存储器的集成电路和用于授予对FRAM存储器的读取访问的方法
- Patent Title: Integrated circuit comprising a FRAM memory and method for granting read-access to a FRAM memory
- Patent Title (中): 包括FRAM存储器的集成电路和用于授予对FRAM存储器的读取访问的方法
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Application No.: US13025878Application Date: 2011-02-11
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Publication No.: US08750015B2Publication Date: 2014-06-10
- Inventor: Volker Rzehak , Rudiger Kuhn , Johannes Gerber , Matthias Arnold
- Applicant: Volker Rzehak , Rudiger Kuhn , Johannes Gerber , Matthias Arnold
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Robert D. Marshall, Jr.; W. James Brady; Frederick J. Telecky, Jr.
- Priority: DE102010007629 20100211
- Main IPC: G11C11/22
- IPC: G11C11/22

Abstract:
An electronic device includes an integrated circuit with a FRAM memory and an integrated capacitor connected between a power supply for the FRAM memory and ground. The integrated capacitor has a capacitance sufficient to store the charge necessary for a complete read-and-write-back cycle of the FRAM memory. When granting read-access to the FRAM memory, the FRAM memory is supplied by the integrated capacitor which is then disconnected from the integrated circuit power supply. Upon receiving a request for a read-access to the FRAM memory, a charge detector detects whether the internal capacitor is sufficiently charged for a complete read-and-write-back cycle of the FRAM memory. Read-access to the FRAM memory is only granted if the internal capacitor is sufficiently charged and disconnected from the power supply. An alternative embodiment alternately charges and powers the FRAM from two integrated capacitors.
Public/Granted literature
- US20130114324A1 Integrated Circuit Comprising a FRAM Memory and Method for Granting Read-Access to a FRAM Memory Public/Granted day:2013-05-09
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