Invention Grant
- Patent Title: Resistive memory using SiGe material
- Patent Title (中): 使用SiGe材料的电阻记忆
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Application No.: US13725331Application Date: 2012-12-21
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Publication No.: US08750019B2Publication Date: 2014-06-10
- Inventor: Wei Lu
- Applicant: Crossbar, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Crossbar, Inc.
- Current Assignee: Crossbar, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Ogawa P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L47/00
Abstract:
A resistive memory device includes a first electrode; a second electrode having a polycrystalline semiconductor layer that includes silicon; a non-crystalline silicon structure provided between the first electrode and the second electrode. The first electrode, second electrode and non-crystalline silicon structure define a two-terminal resistive memory cell.
Public/Granted literature
- US20130134379A1 RESISTIVE MEMORY USING SIGE MATERIAL Public/Granted day:2013-05-30
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