Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US13230122Application Date: 2011-09-12
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Publication No.: US08750023B2Publication Date: 2014-06-10
- Inventor: Kazuma Furutani , Yutaka Shionoiri
- Applicant: Kazuma Furutani , Yutaka Shionoiri
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2010-204405 20100913
- Main IPC: G11C11/24
- IPC: G11C11/24

Abstract:
An object is to provide a semiconductor memory device capable of copying memory data without using an external circuit. The semiconductor memory device includes a bit line to which first terminals of a plurality of memory cells are connected in common; a pre-charge circuit which is connected to the bit line and pre-charges the bit line with a specific potential in data reading; a data holding circuit comprising a capacitor which temporarily holds data read out from the memory cell or data which is written to the memory cell; and an inverted data output circuit which outputs inverted data of data held in the data holding circuit to the bit line. The inverted data output circuit includes a means for controlling output of inverted data of data held in the data holding circuit.
Public/Granted literature
- US20120063206A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2012-03-15
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