Invention Grant
- Patent Title: Magnetoresistive element and magnetic random access memory
- Patent Title (中): 磁阻元件和磁性随机存取存储器
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Application No.: US13236589Application Date: 2011-09-19
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Publication No.: US08750030B2Publication Date: 2014-06-10
- Inventor: Koji Ueda , Tadashi Kai , Toshihiko Nagase , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Hiroaki Yoda
- Applicant: Koji Ueda , Tadashi Kai , Toshihiko Nagase , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Hiroaki Yoda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: JP2010-211204 20100921
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
According to one embodiment, a magnetoresistive element includes an electrode layer, a first magnetic layer, a second magnetic layer and a nonmagnetic layer. The electrode layer includes a metal layer including at least one of Mo, Nb, and W. The first magnetic layer is disposed on the metal layer to be in contact with the metal layer and has a magnetization easy axis in a direction perpendicular to a film plane and is variable in magnetization direction. The second magnetic layer is disposed on the first magnetic layer and has a magnetization easy axis in the direction perpendicular to the film plane and is invariable in magnetization direction. The nonmagnetic layer is provided between the first and second magnetic layers. The magnetization direction of the first magnetic layer is varied by a current that runs through the first magnetic layer, the nonmagnetic layer, and the second magnetic layer.
Public/Granted literature
- US20120069642A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2012-03-22
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