Invention Grant
- Patent Title: Nonvolatile semiconductor memory device and programming method
- Patent Title (中): 非易失性半导体存储器件及编程方法
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Application No.: US13616018Application Date: 2012-09-14
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Publication No.: US08750050B2Publication Date: 2014-06-10
- Inventor: Shuhei Kamano , Teruhiro Harada
- Applicant: Shuhei Kamano , Teruhiro Harada
- Applicant Address: JP Tokyo
- Assignee: LAPIS Semiconductor Co., Ltd.
- Current Assignee: LAPIS Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2011-210551 20110927
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A nonvolatile semiconductor memory device of the charge trap type is initialized by reading the memory cells in the device to determine which charge traps hold less than a predetermined minimum charge and injecting charge into these charge traps until all of the charge traps in the device hold at least the predetermined minimum charge. The charge traps are then programmed selectively with data. The initialization procedure shortens the programming procedure by narrowing the initial distribution of charge in the charge traps, and leads to more reliable reading of the programmed data.
Public/Granted literature
- US20130077398A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND PROGRAMMING METHOD Public/Granted day:2013-03-28
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