Invention Grant
US08750063B2 Sense amplifier control circuit and semiconductor memory device including the same
有权
感应放大器控制电路和包括其的半导体存储器件
- Patent Title: Sense amplifier control circuit and semiconductor memory device including the same
- Patent Title (中): 感应放大器控制电路和包括其的半导体存储器件
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Application No.: US13602258Application Date: 2012-09-03
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Publication No.: US08750063B2Publication Date: 2014-06-10
- Inventor: Don Hyun Choi
- Applicant: Don Hyun Choi
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2012-0056014 20120525
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A sense amplifier control circuit according to the present invention is disposed in a bit line sense amplifier (BLSA) array region including a plurality of BLSAs and is configured to supply a precharge voltage to the plurality of BLSAs in response to a control signal.
Public/Granted literature
- US20130315017A1 SENSE AMPLIFIER CONTROL CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2013-11-28
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