Invention Grant
US08751735B2 Protection against data corruption for multi-level memory cell (MLC) flash memory
有权
防止多层存储单元(MLC)闪存中的数据损坏
- Patent Title: Protection against data corruption for multi-level memory cell (MLC) flash memory
- Patent Title (中): 防止多层存储单元(MLC)闪存中的数据损坏
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Application No.: US14039585Application Date: 2013-09-27
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Publication No.: US08751735B2Publication Date: 2014-06-10
- Inventor: Qun Zhao , Xinhai Kang
- Applicant: Marvell World Trade Ltd.
- Applicant Address: BB St. Michael
- Assignee: Marvell World Trade Ltd.
- Current Assignee: Marvell World Trade Ltd.
- Current Assignee Address: BB St. Michael
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A system including a controller in communication with a memory. The memory includes memory cells arranged in memory blocks. Each memory cell is capable of storing a plurality of bits. Each memory block defines a plurality of pages. A page in a memory block includes one of the plurality of bits of a plurality of memory cells in the memory block. The controller is configured to write data to selected pages in one or more memory blocks. The system includes circuitry configured to write data from a predetermined number of pages of the selected pages to a memory block other than the one or more memory blocks in response to the predetermined number of pages being full of data. The predetermined number is based on one or more of a number of pages in each memory block and a number of bits in the plurality of bits.
Public/Granted literature
- US20140022843A1 Protection Against Data Corruption for Multi-Level Memory Cell (MLC) Flash Memory Public/Granted day:2014-01-23
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