Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
-
Application No.: US13858370Application Date: 2013-04-08
-
Publication No.: US08751911B2Publication Date: 2014-06-10
- Inventor: Shinichi Kanno
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-069012 20100324
- Main IPC: H03M13/00
- IPC: H03M13/00

Abstract:
A CRC code is generated from original data, a BCH code is generated based on the original data and CRC code; the original data, CRC code, and BCH code are recorded in pages from different planes of plural memory chips. An RS code is generated from the original data across pages, a CRC code is generated based on the RS code, a BCH code is generated based on the RS code and the CRC code; the RS, CRC, and BCH codes are recorded in a different memory chip than the original data. When reading data, error correction is performed on the original data using the BCH code, then CRC is calculated. If the number of errors is correctable by erasure correction using the RS code, the original data is so corrected. Otherwise, normal error correction using the RS code and further error correction using the BCH code are performed.
Public/Granted literature
- US20130254622A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2013-09-26
Information query
IPC分类: