Invention Grant
- Patent Title: Optical semiconductor device and method for manufacturing same
- Patent Title (中): 光半导体装置及其制造方法
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Application No.: US13154999Application Date: 2011-06-07
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Publication No.: US08754429B2Publication Date: 2014-06-17
- Inventor: Hiroshi Koizumi , Yasuhide Okada , Susumu Obata , Tomomichi Naka , Kazuhito Higuchi , Kazuo Shimokawa , Yoshiaki Sugizaki , Akihiro Kojima
- Applicant: Hiroshi Koizumi , Yasuhide Okada , Susumu Obata , Tomomichi Naka , Kazuhito Higuchi , Kazuo Shimokawa , Yoshiaki Sugizaki , Akihiro Kojima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-130526 20100607
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00

Abstract:
According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.
Public/Granted literature
- US20110297987A1 OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2011-12-08
Information query
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