Invention Grant
US08757472B2 Method for joining SiC-diamond 有权
SiC-金刚石接合方法

  • Patent Title: Method for joining SiC-diamond
  • Patent Title (中): SiC-金刚石接合方法
  • Application No.: US12669285
    Application Date: 2008-07-17
  • Publication No.: US08757472B2
    Publication Date: 2014-06-24
  • Inventor: David Patrick Egan
  • Applicant: David Patrick Egan
  • Agency: Frommer Lawrence & Haug LLP
  • Agent Ronald R. Santucci
  • Priority: ZA2007/05939 20070717
  • International Application: PCT/IB2008/052878 WO 20080717
  • International Announcement: WO2009/010934 WO 20090122
  • Main IPC: B23K31/02
  • IPC: B23K31/02 B23K20/24
Method for joining SiC-diamond
Abstract:
The invention relates to a method for joining ceramic composite parts comprising at least one ceramic material and at least one superhard material to at least one other part, the method comprising treatment of a joining surface or surfaces of the ceramic composite part; and disposition onto the treated surface or surfaces, or portions thereof, of a material capable of bonding to the ceramic composite part as well as to the at least one other part upon the application of sufficient heat. The invention extends to articles comprising a ceramic composite part comprising ceramic material and at least one superhard material, bonded to at least one other part, the article including at least one layer selected from an attachment layer, a brazeable layer, and an oxidation resistant (braze compatible) layer or combinations thereof included at an interface between the ceramic composite part and the other part.
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