Invention Grant
- Patent Title: Germanium enriched silicon material for making solar cells
- Patent Title (中): 用于制造太阳能电池的富锗硅材料
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Application No.: US12954498Application Date: 2010-11-24
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Publication No.: US08758507B2Publication Date: 2014-06-24
- Inventor: Fritz G. Kirscht , Matthias Heuer , Martin Kaes , Kamel Ounadjela
- Applicant: Fritz G. Kirscht , Matthias Heuer , Martin Kaes , Kamel Ounadjela
- Applicant Address: US CA Palo Alto
- Assignee: Silicor Materials Inc.
- Current Assignee: Silicor Materials Inc.
- Current Assignee Address: US CA Palo Alto
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: C30B21/06
- IPC: C30B21/06 ; C30B27/02

Abstract:
Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells.
Public/Granted literature
- US20110126758A1 GERMANIUM ENRICHED SILICON MATERIAL FOR MAKING SOLAR CELLS Public/Granted day:2011-06-02
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