Invention Grant
- Patent Title: Copper oxide removal techniques
- Patent Title (中): 氧化铜去除技术
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Application No.: US13104314Application Date: 2011-05-10
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Publication No.: US08758638B2Publication Date: 2014-06-24
- Inventor: Weifeng Ye , Victor Nguyen , Mei-Yee Shek , Mihaela Balseanu , Li-Qun Xia , Derek R. Witty
- Applicant: Weifeng Ye , Victor Nguyen , Mei-Yee Shek , Mihaela Balseanu , Li-Qun Xia , Derek R. Witty
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/302
Abstract:
A method for the removal of copper oxide from a copper and dielectric containing structure of a semiconductor chip is provided. The copper and dielectric containing structure may be planarized by chemical mechanical planarization (CMP) and treated by the method to remove copper oxide and CMP residues. Annealing in a hydrogen (H2) gas and ultraviolet (UV) environment removes copper oxide, and a pulsed ammonia plasma removes CMP residues.
Public/Granted literature
- US20120289049A1 COPPER OXIDE REMOVAL TECHNIQUES Public/Granted day:2012-11-15
Information query
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