A method of forming a reversed pattern in a substrate. A resist on a substrate is exposed and developed to form a pattern therein, the patterned resist having a first polarity. The polarity of the patterned resist is reversed to a second polarity, and a reversal film is formed over the patterned resist having the second polarity. The patterned resist having the second polarity is removed, forming a pattern in the reversal film. The pattern in the reversal film is then transferred to the substrate. Additional methods of forming a reversed pattern in a substrate are disclosed, as is a semiconductor structure formed during the methods.