Invention Grant
- Patent Title: Method of cell culture
- Patent Title (中): 细胞培养方法
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Application No.: US13990642Application Date: 2010-12-06
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Publication No.: US08759100B2Publication Date: 2014-06-24
- Inventor: Naoki Yokoyama , Tomonori Akai
- Applicant: Naoki Yokoyama , Tomonori Akai
- Applicant Address: JP Tokyo
- Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Lucas & Mercanti, LLP
- International Application: PCT/JP2010/071831 WO 20101206
- International Announcement: WO2012/077175 WO 20120614
- Main IPC: C12N5/00
- IPC: C12N5/00

Abstract:
This invention provides a means for modifying surface properties of a cell culture substrate under specific conditions, to thereby regulate regions to which cells are allowed to adhere or are not allowed to adhere, depending on cell type. This invention relates to a method of cell culture comprising steps of: applying a positive potential to a conductive region of a substrate comprising a base material having a conductive region and a non-cell-adhesive membrane coupled thereto with the aid of silane, so as to separate the non-cell-adhesive membrane from the substrate; and culturing cells in a region from which the non-cell-adhesive membrane has been separated.
Public/Granted literature
- US20130244328A1 METHOD OF CELL CULTURE Public/Granted day:2013-09-19
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