Invention Grant
- Patent Title: Plating process and structure
- Patent Title (中): 电镀工艺和结构
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Application No.: US13297845Application Date: 2011-11-16
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Publication No.: US08759118B2Publication Date: 2014-06-24
- Inventor: Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
- Applicant: Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/58
Abstract:
A system and method for plating a contact is provided. An embodiment comprises forming protective layers over a contact and a test pad, and then selectively removing the protective layer over the contact without removing the protective layer over the test pad. With the protective layer still on the test pad, a conductive layer may be plated onto the contact without plating it onto the test pad. After the contact has been plated, the protective layer over the contact may be removed.
Public/Granted literature
- US20130119382A1 Plating Process and Structure Public/Granted day:2013-05-16
Information query
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