Invention Grant
US08759119B2 Method of testing a semiconductor device and suctioning a semiconductor device in the wafer state
失效
测试半导体器件并在晶片状态下抽吸半导体器件的方法
- Patent Title: Method of testing a semiconductor device and suctioning a semiconductor device in the wafer state
- Patent Title (中): 测试半导体器件并在晶片状态下抽吸半导体器件的方法
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Application No.: US13777221Application Date: 2013-02-26
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Publication No.: US08759119B2Publication Date: 2014-06-24
- Inventor: Shigeyuki Maruyama , Yasuyuki Itoh , Tetsurou Honda , Kazuhiro Tashiro , Makoto Haseyama , Kenichi Nagashige , Yoshiyuki Yoneda , Hirohisa Matsuki
- Applicant: Fujitsu Semiconductor Limited
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP11-321590 19991111
- Main IPC: G01R31/26
- IPC: G01R31/26
Abstract:
A semiconductor device has an alignment mark which can be recognized by a conventional wafer prober. A redistribution layer connects electrodes of the semiconductor device to electrode pads located in predetermined positions of the redistribution layer. Metal posts configured to be provided with external connection electrodes are formed on the electrode pads of the redistribution layer. A mark member made of the same material as the metal posts is formed on the redistribution layer. The mark member serves as an alignment mark located in a predetermined positional relationship with the metal posts.
Public/Granted literature
- US20130171748A1 METHOD OF TESTING A SEMICONDUCTOR DEVICE AND SUCTIONING A SEMICONDUCTOR DEVICE IN THE WAFER STATE Public/Granted day:2013-07-04
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