Invention Grant
- Patent Title: Method for making a sensor device using a graphene layer
- Patent Title (中): 制造使用石墨烯层的传感器装置的方法
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Application No.: US13226173Application Date: 2011-09-06
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Publication No.: US08759153B2Publication Date: 2014-06-24
- Inventor: Klaus Elian , Guenther Ruhl , Horst Theuss , Irmgard Escher-Poeppel
- Applicant: Klaus Elian , Guenther Ruhl , Horst Theuss , Irmgard Escher-Poeppel
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L21/50 ; H01L23/28 ; H01L23/00
Abstract:
A graphene layer is generated on a substrate. A plastic material is deposited on the graphene layer to at least partially cover the graphene layer. The substrate is separated into at least two substrate pieces.
Public/Granted literature
- US20130056703A1 Sensor Device and Method Public/Granted day:2013-03-07
Information query
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