Invention Grant
- Patent Title: Heat dissipation methods and structures for semiconductor device
- Patent Title (中): 半导体器件的散热方法和结构
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Application No.: US13966069Application Date: 2013-08-13
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Publication No.: US08759157B2Publication Date: 2014-06-24
- Inventor: Masanori Onodera
- Applicant: Spansion LLC
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Priority: JP2006-353413 20061227
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/02 ; H01L23/48 ; H01L23/367 ; H01L23/36 ; H01L33/64 ; H01L23/40
Abstract:
A semiconductor device with efficient heat dissipating structures is disclosed. The semiconductor device includes a first semiconductor chip that is flip-chip mounted on a first substrate, a heat absorption portion that is formed between the first semiconductor chip and the first substrate, an outer connection portion that connects the first semiconductor chip to an external device and a heat conduction portion formed between the heat absorption portion and the outer connection portion to dissipate heat generated by the first semiconductor chip.
Public/Granted literature
- US20130337612A1 HEAT DISSIPATION METHODS AND STRUCTURES FOR SEMICONDUCTOR DEVICE Public/Granted day:2013-12-19
Information query
IPC分类:
