Method for producing silicon semiconductor wafers comprising a layer for integrating III-V semiconductor components

Invention Grant

US08759169B2 Method for producing silicon semiconductor wafers comprising a layer for integrating III-V semiconductor components 有权

Title translation: 包括用于集成III-V半导体部件的层的硅半导体晶片的制造方法

Please log in to see more content

Patent Title: Method for producing silicon semiconductor wafers comprising a layer for integrating III-V semiconductor components
Patent Title (中): 包括用于集成III-V半导体部件的层的硅半导体晶片的制造方法
Application No.: US13504197

Application Date: 2010-11-02
Publication No.: US08759169B2

Publication Date: 2014-06-24
Inventor: Gabriel Kittler , Ralf Lerner
Applicant: Gabriel Kittler , Ralf Lerner
Applicant Address: DE Erfurt
Assignee: X—FAB Semiconductor Foundries AG
Current Assignee: X—FAB Semiconductor Foundries AG
Current Assignee Address: DE Erfurt
Agency: Stevens & Showalter, LLP
Priority: DE102009051520 20091031
International Application: PCT/EP2010/066642 WO 20101102
International Announcement: WO2011/051499 WO 20110505
Main IPC: H01L21/338
IPC: H01L21/338

Method for producing silicon semiconductor wafers comprising a layer for integrating III-V semiconductor components

Abstract:

The invention relates to a method for producing silicon semiconductor wafers and components having layer structures of III-V layers for integrating III-V semiconductor components. The method employs SOI silicon semiconductor wafers having varying substrate orientations, and the III-V semiconductor layers are produced in trenches (28, 43, 70) produced by etching within certain regions (38, 39), which are electrically insulated from each other, of the active semiconductor layer (24, 42) by means of a cover layer or cover layers (29) using MOCVD methods.

Abstract(Chinese):

本发明涉及一种用于制造硅半导体晶片的方法和具有用于集成III-V半导体部件的III-V层的层结构的部件。该方法采用具有改变的衬底取向的SOI硅半导体晶片，并且通过在彼此电绝缘的某些区域（38,39）内的蚀刻产生的沟槽（28,43,70）中产生III-V半导体层，通过使用MOCVD方法的覆盖层或覆盖层（29）形成有源半导体层（24,42）。

Public/Granted literature

US20120270378A1 Method for Producing Silicon Semiconductor Wafers Comprising a Layer for Integrating III-V Semiconductor Components Public/Granted day:2012-10-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/338	......带有肖特基栅的