Invention Grant
- Patent Title: Hafnium tantalum oxynitride dielectric
- Patent Title (中): 铪钽氧氮化物电介质
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Application No.: US13915341Application Date: 2013-06-11
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Publication No.: US08759170B2Publication Date: 2014-06-24
- Inventor: Leonard Forbes , Kie Y. Ahn , Arup Bhattacharyya
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L21/336
Abstract:
Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may be structured as one or more monolayers. The hafnium tantalum oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a hafnium tantalum oxynitride film.
Public/Granted literature
- US20130279259A1 HAFNIUM TANTALUM OXYNITRIDE DIELECTRIC Public/Granted day:2013-10-24
Information query
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