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US08759171B2 Field controlled diode with positively biased gate 有权
具有正偏置栅极的场控二极管

Field controlled diode with positively biased gate
Abstract:
An integrated circuit containing a field controlled diode which includes a p-type channel region between an upper gate and a lower n-type depletion gate, a p-type anode in a p-type anode well abutting the channel region, and an n-type cathode in a p-type anode well abutting the channel region opposite from the anode well. An n-type lower gate link connects the lower gate to the surface of the substrate. A surface control element is located at the surface of the channel region between the cathode and the upper gate. A process of forming the integrated circuit containing the field controlled diode is described.
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