Invention Grant
- Patent Title: Field controlled diode with positively biased gate
- Patent Title (中): 具有正偏置栅极的场控二极管
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Application No.: US14099975Application Date: 2013-12-08
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Publication No.: US08759171B2Publication Date: 2014-06-24
- Inventor: Akram A. Salman
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Wade J Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/337
- IPC: H01L21/337

Abstract:
An integrated circuit containing a field controlled diode which includes a p-type channel region between an upper gate and a lower n-type depletion gate, a p-type anode in a p-type anode well abutting the channel region, and an n-type cathode in a p-type anode well abutting the channel region opposite from the anode well. An n-type lower gate link connects the lower gate to the surface of the substrate. A surface control element is located at the surface of the channel region between the cathode and the upper gate. A process of forming the integrated circuit containing the field controlled diode is described.
Public/Granted literature
- US20140087530A1 Field Controlled Diode With Positively Biased Gate Public/Granted day:2014-03-27
Information query
IPC分类: