Selective removal of a silicon oxide layer

Invention Grant

US08759174B2 Selective removal of a silicon oxide layer 有权

Title translation: 选择性去除氧化硅层

Please log in to see more content

Patent Title: Selective removal of a silicon oxide layer
Patent Title (中): 选择性去除氧化硅层
Application No.: US12559810

Application Date: 2009-09-15
Publication No.: US08759174B2

Publication Date: 2014-06-24
Inventor: Markus Müller , Alexandre Mondot , Pascal Besson
Applicant: Markus Müller , Alexandre Mondot , Pascal Besson
Applicant Address: FR Crolles FR Montrouge NL Ag Eindhoven
Assignee: STMicroelectronics (Crolles 2) SAS,STMicroelectronics S.A.,NXP B.V.
Current Assignee: STMicroelectronics (Crolles 2) SAS,STMicroelectronics S.A.,NXP B.V.
Current Assignee Address: FR Crolles FR Montrouge NL Ag Eindhoven
Agency: Wolf, Greenfield & Sacks, P.C.
Priority: EP05109696 20051018
Main IPC: H01L21/8238
IPC: H01L21/8238

Selective removal of a silicon oxide layer

Abstract:

A method of fabricating a device, including the steps of forming a first silicon oxide layer within a first region of the device and a second silicon oxide layer within a second region of the device, implanting doping ions of a first type into the first region, implanting doping ions of a second type into the second region, and etching the first and second regions for a determined duration such that the first silicon oxide layer is removed and at least a part of the second silicon oxide layer remains.

Abstract(Chinese):

一种制造器件的方法，包括以下步骤：在器件的第一区域内形成第一氧化硅层，在器件的第二区域内形成第二氧化硅层，将第一类型的掺杂离子注入第一区域; 将第二类型的掺杂离子注入到所述第二区域中，以及蚀刻所述第一和第二区域一段确定的持续时间，以使得所述第一氧化硅层被去除并且所述第二氧化硅层的至少一部分保留。

Public/Granted literature

US20100041189A1 SELECTIVE REMOVAL OF A SILICON OXIDE LAYER Public/Granted day:2010-02-18

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS