Invention Grant
- Patent Title: Reprocessing method of a semiconductor device
- Patent Title (中): 半导体器件的再处理方法
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Application No.: US13602573Application Date: 2012-09-04
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Publication No.: US08759189B2Publication Date: 2014-06-24
- Inventor: Jin-San Jung
- Applicant: Jin-San Jung
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2012-0003503 20120111
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A reprocessing method of a semiconductor device, the reprocessing method includes adjusting a resistance value of a first resistor by first trimming the first resistor, wherein the first resistor is electrically connected between a first pad and a second pad, forming a second resistor on the first trimmed first resistor, and adjusting a resistance value of the second resistor by second trimming the second resistor.
Public/Granted literature
- US20130178040A1 REPROCESSING METHOD OF A SEMICONDUCTOR DEVICE Public/Granted day:2013-07-11
Information query
IPC分类:
