A method of fabricating a semiconductor device includes forming a first insulating layer over a semiconductor substrate, a contact plug within the first insulating layer, an etch stop layer over the first insulating layer, and a second insulating layer over the etch stop layer. The second insulating layer has an opening over the contact plug. A first metal layer, a dielectric material, and a second metal layer are deposited in the opening. The first metal layer engages the contact plug and is free of direct contact with the first insulating layer.