Invention Grant
US08759196B2 Method for preparing a substrate by implantation and irradiation 有权
通过注入和照射制备衬底的方法

  • Patent Title: Method for preparing a substrate by implantation and irradiation
  • Patent Title (中): 通过注入和照射制备衬底的方法
  • Application No.: US13700435
    Application Date: 2011-06-08
  • Publication No.: US08759196B2
    Publication Date: 2014-06-24
  • Inventor: Michel Bruel
  • Applicant: Michel Bruel
  • Applicant Address: FR Bernin
  • Assignee: Soitec
  • Current Assignee: Soitec
  • Current Assignee Address: FR Bernin
  • Agency: TraskBritt
  • Priority: FR1055058 20100624
  • International Application: PCT/EP2011/059440 WO 20110608
  • International Announcement: WO2011/160950 WO 20111229
  • Main IPC: H01L21/30
  • IPC: H01L21/30
Method for preparing a substrate by implantation and irradiation
Abstract:
A method for preparing a substrate for detaching a layer by irradiation of the substrate with a light flux for heating a buried region of the substrate and bringing about decomposition of the material of that region to detach the detachment layer. The method includes fabricating an intermediate substrate including a first buried layer, and a second covering layer that covers all or part of the first layer, with the covering layer being substantially transparent to the light flux and with the buried layer formed by implantation of particles into the substrate, followed by absorbing the flux, and selectively and adiabatically irradiating a treated region of the buried layer until at least partial decomposition of the material constituting it ensues.
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