Invention Grant
- Patent Title: Accelerated furnace ramp rates for reduced slip
- Patent Title (中): 加速升温速率降低滑差
-
Application No.: US13584004Application Date: 2012-08-13
-
Publication No.: US08759198B2Publication Date: 2014-06-24
- Inventor: Bradley David Sucher , Rick L. Wise
- Applicant: Bradley David Sucher , Rick L. Wise
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/322
- IPC: H01L21/322
Abstract:
A method for fabricating an integrated circuit (IC) includes initial oxidizing of a semiconductor surface of a substrate. The substrate is heated after the initial oxidizing using a plurality of furnace processing steps which each include a peak processing temperature between 800° C. and 1300° C. The furnace processing steps include at least one accelerated processing step having an accelerated ramp portion in a temperature range between 800° C. and 1250° C. providing an accelerated ramp-up rate and/or an |accelerated ramp-down rate| of at least (≧) 5.5° C./min.
Public/Granted literature
- US20140045321A1 ACCELERATED FURNACE RAMP RATES FOR REDUCED SLIP Public/Granted day:2014-02-13
Information query
IPC分类:
