Invention Grant
- Patent Title: Method of selectively growing semiconductor carbon nanotubes using light irradiation
- Patent Title (中): 使用光照射选择性生长半导体碳纳米管的方法
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Application No.: US12879087Application Date: 2010-09-10
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Publication No.: US08759199B2Publication Date: 2014-06-24
- Inventor: Won-mook Choi , Jae-young Choi , Jin Zhang , Guo Hong
- Applicant: Won-mook Choi , Jae-young Choi , Jin Zhang , Guo Hong
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2009-0109186 20091112
- Main IPC: H01L21/36
- IPC: H01L21/36 ; H01L21/20

Abstract:
A method of selectively growing a plurality of semiconductor carbon nanotubes using light irradiation. The method includes disposing a plurality of nanodots, which include a catalyst material, on a substrate; growing a plurality of carbon nanotubes from the plurality of nanodots, and irradiating light onto the nanodot to selectively grow the plurality of semiconductor carbon nanotubes.
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