Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13101569Application Date: 2011-05-05
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Publication No.: US08759212B2Publication Date: 2014-06-24
- Inventor: Ippei Kume , Jun Kawahara , Naoya Furutake , Shinobu Saitou , Yoshihiro Hayashi
- Applicant: Ippei Kume , Jun Kawahara , Naoya Furutake , Shinobu Saitou , Yoshihiro Hayashi
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2010-107698 20100507
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/302 ; H01L21/461 ; H01L21/31 ; H01L21/469
Abstract:
A method of manufacturing a semiconductor device includes: forming a cap insulating film, including Si and C, on a substrate; forming an organic silica film, having a composition ratio of the number of carbon atoms to the number of silicon atoms higher than that of the cap insulating film, on the cap insulating film; and forming two or more concave portions, having different opening diameters, in the organic silica film, by plasma processing in which mixed gas including inert gas, N-containing gas, fluorocarbon gas and oxidant gas is used.
Public/Granted literature
- US20110272813A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2011-11-10
Information query
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