Invention Grant
- Patent Title: Compositions and methods for polishing silicon nitride materials
- Patent Title (中): 用于研磨氮化硅材料的组合物和方法
-
Application No.: US11448205Application Date: 2006-06-07
-
Publication No.: US08759216B2Publication Date: 2014-06-24
- Inventor: Jeffrey Dysard , Sriram Anjur , Timothy Johns , Zhan Chen
- Applicant: Jeffrey Dysard , Sriram Anjur , Timothy Johns , Zhan Chen
- Applicant Address: US IL Aurora
- Assignee: Cabot Microelectronics Corporation
- Current Assignee: Cabot Microelectronics Corporation
- Current Assignee Address: US IL Aurora
- Agent Thomas E Omhoit; Robert J Ross; Steven D Weseman
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/336 ; C03C15/00 ; C03C25/68
Abstract:
The present invention provides a method for polishing silicon nitride-containing substrates. The method comprises abrading a surface of a silicon nitride substrate with a polishing composition, which comprises colloidal silica, at least one acidic component, and an aqueous carrier. The at least one acidic component has a pKa in the range of about 1 to 4.5. The composition has a pH in the range of about 0.5 pH units less than the pKa of the at least one acidic component to about 1.5 pH units greater than the pKa.
Public/Granted literature
- US20070298612A1 Compositions and methods for polishing silicon nitride materials Public/Granted day:2007-12-27
Information query
IPC分类:
