Invention Grant
- Patent Title: Method for manufacturing epitaxial wafer
- Patent Title (中): 外延晶片制造方法
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Application No.: US12162732Application Date: 2007-01-24
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Publication No.: US08759229B2Publication Date: 2014-06-24
- Inventor: Sakae Koyata , Kazushige Takaishi , Tomohiro Hashii , Katsuhiko Murayama , Takeo Katoh
- Applicant: Sakae Koyata , Kazushige Takaishi , Tomohiro Hashii , Katsuhiko Murayama , Takeo Katoh
- Applicant Address: JP Tokyo
- Assignee: Sumco Corporation
- Current Assignee: Sumco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2006-021902 20060131
- International Application: PCT/JP2007/051031 WO 20070124
- International Announcement: WO2007/088754 WO 20070809
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method for manufacturing an epitaxial wafer that can reduce occurrence of a surface defect or a slip formed on an epitaxial layer is provided. The manufacturing method is characterized by comprising: a smoothing step of controlling application of an etchant to a wafer surface in accordance with a surface shape of a silicon wafer to smooth the wafer surface; and an epitaxial layer forming step of forming an epitaxial layer formed of a silicon single crystal on the surface of the wafer based on epitaxial growth.
Public/Granted literature
- US20090053894A1 Method for Manufacturing Epitaxial Wafer Public/Granted day:2009-02-26
Information query
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