Invention Grant
US08759563B2 Low-impurity organosilicon product as precursor for CVD 有权
低杂质有机硅产品作为CVD的前体

Low-impurity organosilicon product as precursor for CVD
Abstract:
The present invention provides an organosilicon composition comprising diethoxymethylsilane, a concentration of dissolved residual chloride, and a concentration of dissolved residual chloride scavenger that does not yield unwanted chloride salt precipitate when combined with another composition comprising diethoxymethylsilane.
Public/Granted literature
Information query
Patent Agency Ranking
0/0