Invention Grant
- Patent Title: Photoelectric conversion device
- Patent Title (中): 光电转换装置
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Application No.: US13616091Application Date: 2012-09-14
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Publication No.: US08759667B2Publication Date: 2014-06-24
- Inventor: Shigeo Yata
- Applicant: Shigeo Yata
- Applicant Address: JP Osaka
- Assignee: Sanyo Electric Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Dittavong Mori & Steiner, P.C.
- Priority: JP2010-103482 20100428
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
Disclosed is a photoelectric conversion device with improved photoelectric conversion efficiency. In the disclosed photoelectric conversion device, an amorphous silicon photoelectric conversion unit with an amorphous i-type layer and a microcrystalline silicon photoelectric conversion unit with a microcrystalline i-type layer are laminated, and an intermediate layer, which is disposed between the amorphous silicon photoelectric conversion unit and the microcrystalline silicon photoelectric conversion unit, has a lower refractive index than the layers in contact with the front or back surfaces thereof, wherein the higher the crystalline fraction of the microcrystalline i-type layer in the panel surface, the thicker the film of the intermediate layer.
Public/Granted literature
- US20130000710A1 PHOTOELECTRIC CONVERSION DEVICE Public/Granted day:2013-01-03
Information query
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