Invention Grant
- Patent Title: Barrier and planarization layer for thin-film photovoltaic cell
- Patent Title (中): 用于薄膜光伏电池的阻挡层和平坦化层
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Application No.: US13351170Application Date: 2012-01-16
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Publication No.: US08759669B2Publication Date: 2014-06-24
- Inventor: Urs Schoop , Walter Stoss , Nguyet Nguyen , Scott Wiedeman
- Applicant: Urs Schoop , Walter Stoss , Nguyet Nguyen , Scott Wiedeman
- Applicant Address: HK West KL
- Assignee: Hanergy Hi-Tech Power (HK) Limited
- Current Assignee: Hanergy Hi-Tech Power (HK) Limited
- Current Assignee Address: HK West KL
- Agency: Kolisch Hartwell, P.C.
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/00 ; H01L31/0224 ; H01L31/0236 ; H01L31/032

Abstract:
Thin film photovoltaic cells and methods of manufacturing such cells that include one or more diffusion barrier layers configured to provide a relatively smooth growth surface for subsequent deposition of a p-type semiconductor layer. Diffusion barrier layers according to the present teachings may be amorphous, microcrystalline or nanocrystalline layers of materials including molybdenum, conductive oxides, conductive nitrides, conductive carbides, or mixtures thereof. In some cases a diffusion barrier layer may be configured to have surface roughness less than a predetermined threshold value.
Public/Granted literature
- US20120192941A1 BARRIER AND PLANARIZATION LAYER FOR THIN-FILM PHOTOVOLTAIC CELL Public/Granted day:2012-08-02
Information query
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