Invention Grant
- Patent Title: Element substrate and light emitting device
- Patent Title (中): 元件基板和发光器件
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Application No.: US13804538Application Date: 2013-03-14
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Publication No.: US08759825B2Publication Date: 2014-06-24
- Inventor: Mitsuaki Osame , Aya Anzai , Yu Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2003-086496 20030326; JP2003-139554 20030516
- Main IPC: H01L27/28
- IPC: H01L27/28 ; H01L51/52

Abstract:
A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to the invention, a depletion mode transistor is used as a driving transistor. The gate of the driving transistor is fixed in its potential or connected to the source or drain thereof to operate in a saturation region with a constant current flow. A current controlling transistor which operates in a linear region is connected in series to the driving transistor, and a video signal for transmitting a light emission or non-emission of a pixel is inputted to the gate of the current controlling transistor through a switching transistor.
Public/Granted literature
- US20130193424A1 ELEMENT SUBSTRATE AND LIGHT EMITTING DEVICE Public/Granted day:2013-08-01
Information query
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