Invention Grant
- Patent Title: ZnO-based semiconductor device and manufacturing method thereof
- Patent Title (中): ZnO系半导体器件及其制造方法
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Application No.: US13445593Application Date: 2012-04-12
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Publication No.: US08759828B2Publication Date: 2014-06-24
- Inventor: Shunsuke Akasaka , Masashi Kawasaki , Atsushi Tsukazaki
- Applicant: Shunsuke Akasaka , Masashi Kawasaki , Atsushi Tsukazaki
- Applicant Address: JP Kyoto JP Miyagi
- Assignee: Rohm Co., Ltd.,Tohoku University
- Current Assignee: Rohm Co., Ltd.,Tohoku University
- Current Assignee Address: JP Kyoto JP Miyagi
- Agency: Rabin & Berdo, P.C.
- Priority: JP2011-089002 20110413
- Main IPC: H01L29/22
- IPC: H01L29/22
Abstract:
A ZnO-based semiconductor device includes an n type ZnO-based semiconductor layer, an aluminum oxide film formed on the n type ZnO-based semiconductor layer, and a palladium layer formed on the aluminum oxide film. With this configuration, the n type ZnO-based semiconductor layer and the palladium layer form a Schottky barrier structure.
Public/Granted literature
- US20120261658A1 ZnO-BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-10-18
Information query
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