Invention Grant
- Patent Title: Thin film transistor array structure and manufacturing method thereof
- Patent Title (中): 薄膜晶体管阵列结构及其制造方法
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Application No.: US13375231Application Date: 2011-10-25
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Publication No.: US08759831B2Publication Date: 2014-06-24
- Inventor: Wei-Hung Chang , Chengming He
- Applicant: Wei-Hung Chang , Chengming He
- Applicant Address: CN Shenzhen
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Shenzhen
- Priority: CN201110239955 20110819
- International Application: PCT/CN2011/081223 WO 20111025
- International Announcement: WO2013/026229 WO 20130228
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/00

Abstract:
A thin film transistor (TFT) array structure for a liquid crystal display (LCD) includes a panel, a first conductive layer, a middle layer, a second conductive layer, a passivation layer, and a black electrode layer. The first conductive layer is formed on the panel using filming technologies and a first photo-mask process. The middle layer is deposited and formed on the first conductive layer using a second photo-mask process. The second conductive layer is formed on the middle layer using a third photo-mask process and a first etching operation. The passivation layer is deposited and formed on the middle layer and the second conductive layer using a forth photo-mask process and a second etching operation. The black electrode layer formed on the passivation layer. The TFT array structure and the manufacturing method of the present disclosure reduce the consumption of the voltage and improve the display effect of the LCD.
Public/Granted literature
- US20130043472A1 THIN FILM TRANSISTOR ARRAY STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-02-21
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