Invention Grant
US08759852B2 Semiconductor device having stacked body on substrate via joining metal and method for manufacturing the same
有权
具有通过接合金属的基板上的层叠体的半导体装置及其制造方法
- Patent Title: Semiconductor device having stacked body on substrate via joining metal and method for manufacturing the same
- Patent Title (中): 具有通过接合金属的基板上的层叠体的半导体装置及其制造方法
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Application No.: US13039583Application Date: 2011-03-03
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Publication No.: US08759852B2Publication Date: 2014-06-24
- Inventor: Akihiro Fujiwara , Takashi Hakuno , Tokuhiko Matsunaga , Kimitaka Yoshimura , Katsufumi Kondo
- Applicant: Akihiro Fujiwara , Takashi Hakuno , Tokuhiko Matsunaga , Kimitaka Yoshimura , Katsufumi Kondo
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Main IPC: H01L29/22
- IPC: H01L29/22 ; H01L29/24
Abstract:
According to one embodiment, a semiconductor device includes a substrate and a stacked body on the substrate via a joining metal layer. The stacked body includes a device portion and a peripheral portion. The device portion includes from a bottommost layer to a topmost layer included in the stacked body. The peripheral portion surrounding and provided around the device portion; the peripheral portion is a portion of the bottommost layer to the topmost layer included in the stacked body and includes a portion of a semiconductor layer in contact with the joining metal layer.
Public/Granted literature
- US20120018752A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-01-26
Information query
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