Invention Grant
US08759889B2 Systems and devices including multi-gate transistors and methods of using, making, and operating the same
有权
包括多栅极晶体管的系统和器件及其使用，制造和操作的方法
- Patent Title: Systems and devices including multi-gate transistors and methods of using, making, and operating the same
- Patent Title (中): 包括多栅极晶体管的系统和器件及其使用，制造和操作的方法
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Application No.: US13891538Application Date: 2013-05-10
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Publication No.: US08759889B2Publication Date: 2014-06-24
- Inventor: Werner Juengling
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
Disclosed are methods of forming transistors. In one embodiment, the transistors are formed by forming a plurality of elliptical bases in a substrate and forming fins form the elliptical bases. The transistors are formed within the fin such that they may be used as access devices in a memory array.
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