Invention Grant
- Patent Title: Semiconductor device with buried bit lines and method for fabricating the same
- Patent Title (中): 具有掩埋位线的半导体器件及其制造方法
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Application No.: US13938796Application Date: 2013-07-10
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Publication No.: US08759890B2Publication Date: 2014-06-24
- Inventor: Ki-Ro Hong
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0053001 20100604
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A semiconductor device includes active regions separated by a trench, a separation layer dividing the trench, and buried bit lines buried in the trench with the separation layer interposed between the buried bit lines.
Public/Granted literature
- US20130292792A1 SEMICONDUCTOR DEVICE WITH BURIED BIT LINES AND METHOD FOR FABRICATING THE SAME Public/Granted day:2013-11-07
Information query
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