Invention Grant
US08759901B2 Nonvolatile semiconductor memory device including a charge storage layer and semiconductor region in a groove
有权
非易失性半导体存储器件，其包括电荷存储层和凹槽中的半导体区域
- Patent Title: Nonvolatile semiconductor memory device including a charge storage layer and semiconductor region in a groove
- Patent Title (中): 非易失性半导体存储器件，其包括电荷存储层和凹槽中的半导体区域
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Application No.: US12855212Application Date: 2010-08-12
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Publication No.: US08759901B2Publication Date: 2014-06-24
- Inventor: Masaaki Higuchi , Yoshio Ozawa , Katsuyuki Sekine , Ryota Fujitsuka
- Applicant: Masaaki Higuchi , Yoshio Ozawa , Katsuyuki Sekine , Ryota Fujitsuka
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-194542 20090825
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
According to one embodiment, a nonvolatile semiconductor memory device including a semiconductor layer with a main surface, a first insulating layer formed on the main surface of the semiconductor layer, a charge storage layer formed on the first insulating layer, a second insulating layer formed on the charge storage layer, and a control gate electrode formed on the second insulating layer. At least one inelastic scattering film that reduces energy of electrons by scattering is contained in at least one of the charge storage layer and second insulating layer.
Public/Granted literature
- US20110049612A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-03-03
Information query
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