Invention Grant
- Patent Title: Non-volatile memory device with vertical memory cells
- Patent Title (中): 具有垂直存储单元的非易失性存储器件
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Application No.: US13333893Application Date: 2011-12-21
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Publication No.: US08759902B2Publication Date: 2014-06-24
- Inventor: Jung-Ryul Ahn
- Applicant: Jung-Ryul Ahn
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0084122 20110823
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L27/115 ; H01L29/66 ; H01L21/28
Abstract:
A non-volatile memory device includes a plurality of gate electrodes stacked over a semiconductor substrate and stretched in a first direction along the semiconductor substrate and a plurality of junction layers having a first region protruding from the semiconductor substrate and crossing the gate electrodes and a second region formed between the gate electrodes.
Public/Granted literature
- US20130049097A1 NON-VOLATILE MEMORY DEVICE WITH VERTICAL MEMORY CELLS AND METHOD FOR FABRICATING THE SAME Public/Granted day:2013-02-28
Information query
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