Invention Grant
US08759904B2 Electronic device having plural FIN-FETs with different FIN heights and planar FETs on the same substrate
有权
具有在同一衬底上具有不同FIN高度的多个FIN-FET和平面FET的电子器件
- Patent Title: Electronic device having plural FIN-FETs with different FIN heights and planar FETs on the same substrate
- Patent Title (中): 具有在同一衬底上具有不同FIN高度的多个FIN-FET和平面FET的电子器件
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Application No.: US13217061Application Date: 2011-08-24
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Publication No.: US08759904B2Publication Date: 2014-06-24
- Inventor: Jeremy A. Wahl , Kingsuk Maitra
- Applicant: Jeremy A. Wahl , Kingsuk Maitra
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries, Inc.
- Current Assignee: GlobalFoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L27/088
- IPC: H01L27/088
Abstract:
Electronic devices (20, 20′) of superior design flexibility that avoid channel-width quantization effects common with prior art fin-type (FIN) field effect transistors (FIN-FETS) (22) are obtained by providing multiple FIN-FETs (22) and at least one planar FET (32, 32′) on a common substrate (21), wherein the multiple FIN-FETs (22) have fins (231, 232) of at least fin heights H1 and H2, with H2
Public/Granted literature
- US20130049136A1 COMBINED PLANAR FET AND FIN-FET DEVICES AND METHODS Public/Granted day:2013-02-28
Information query
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