Plural island-form emitter cells (22) having a p-base region (23) and an n+ emitter region (24) are provided, distanced from each other, on a main surface of an n− layer (21). A trench (25) deeper than the p-base region (23) is formed on either side of the emitter cell (22). A first gate electrode (26) is embedded in the trench (25) across a first gate insulating film (41). A second gate electrode (27) that electrically connects first gate electrodes (26) is provided, across a second gate insulating film (40), on a surface of a region of the p-base region (23) sandwiched by the n+ emitter region (24). A conductive region (28) that electrically connects second gate electrodes (27) is provided, across a third gate insulating film (42), on a surface of the n− layer (21). A contact region (29) that is isolated from the second gate electrode (27), and that short circuits the n+ emitter region (24) and p-base region (23), is provided.